Münster 1997 – scientific programme

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HL: Halbleiterphysik

HL 38: Implantation

HL 38.10: Talk

Friday, March 21, 1997, 13:15–13:30, H2

Recombination In Silicon Irradiated with 92 MeV Boron Ions — •S.N. Jakubenja¹, V.Yu. Yavid¹, V.S. Varichenko^1,2, and A.M. Zaitsev² — ¹Belarussian State University, HEII Laboratory, Minsk 220080, Belarus — ²FernUniversity Hagen, LGBE, Haldener Str. 182, 58084 Hagen, Germany

Production of recombanation centers, peculiarities of their behaviour during thermal annealing, and spatial distributions of these defects over the irradiated layer have been investigated in silicon irradiated with high energy boron ions. It has been shown that the recombination centers are created predominantly in confined buried desordered regions. These centers have been shown to cause the appearence of energy levels in the band gap at Ec-(0.12-0.18) eV.