Münster 1997 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 38: Implantation

HL 38.9: Vortrag

Freitag, 21. März 1997, 13:00–13:15, H2

Diffusion of Nitrogen in Diamond Irradiated with High Energy Ions — •A.R. Filipp¹, V.S. Varichenko^1,2, and A.M. Zaitsev² — ¹Belarussian State University, HEII Laboratory, Minsk 220050, Belarus — ²FernUniversity Hagen, LGBE, Haldener Str. 182, 58084 Hagen, Germany

Spatial distributions of nitrogen containing luminescence centers have been studied by cathodoluminescence in natural low nitrogen type IIa diamond irradiated with 69 MeV nickel and 82 MeV carbon ions. High temperature high pressure treatment at 2200^∘C and 70 kbar has led to appearance of the nitrogen centers (the H3, N3, 575 nm) in the irradiated layers. The observed formation of these centers has been explained by the diffusion of nitrogen atoms through the latent ion tracks created by high energy ion irradiation. A mechanism of the diffusion is discussed.