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DS: Dünne Schichten

DS 38: Postersitzung

DS 38.47: Poster

Dienstag, 28. März 2000, 09:30–17:30, Poster B

Non-destructive Analysis of Oxide Layer Thickness of Si Wafer Bonds — •C. C. Himcinschi¹, A. Milekhin^1,2, M. Friedrich¹, K. Hiller³, M. Wiemer³, T. Gessner³, and D.R.T. Zahn¹ — ¹Institut für Physik, Technische Universität Chemnitz, D-09107 Chemnitz, Germany — ²Institute of Semiconductor Physics, 630090 Novosibirsk, Russia — ³Zentrum für Mikrotechnologien, Technische Universität Chemnitz, D-09107 Chemnitz, Germany

We present a study of Si wafers bonded at different temperatures (20^oC - 1100^oC) using infrared (IR) spectroscopy and ellipsometry. The analysis of the IR spectra of bonds in the spectral range of the SiO₂ optical phonons shows the increase of oxide layer thickness when the bonding temperature increases. In order to distinguish the contribution of the surface oxide in IR spectra additional ellipsometric measurements were performed. The structural parameters (oxide thickness, refractive index) obtained were used in a model of multilayered structure for the fitting procedure of IR transmittance. The changes of the atomic arrangement at the interface of Si wafer bonds evidenced by IR spectroscopy are discussed.