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HL: Halbleiterphysik

HL 24: Poster II

HL 24.81: Poster

Donnerstag, 29. März 2001, 10:30–19:00, Rang S\ 3

Highly (112) oriented CuInS₂ films deposited by RF sputtering — •Yunbin He, Angelika Polity, Ingo Österreicher, Ralf Gregor, and Bruno K. Meyer — I. Physikalisches Institut, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 16, 35392 Gießen

CuInS₂ films were deposited on float glass substrates by a reactive RF sputter process using a Cu-In inlay target and H₂S gas. By optimization of sputter parameters, such as sputter power, temperature of the substrate, and the flow of H₂S, pure CuInS₂ layers with chalcopyrite structure were obtained. X-ray diffraction (XRD) spectra of the films showed (112) preferential orientation, which was also directly observed by Atomic Force Microscopy (AFM). X- ray photoelectron spectroscopy (XPS) was used to check the composition of the layers sputtered under different conditions. The absorption coefficients of the films were determined by transmission measurements, and the direct band gap of the films was found to be in the rang from 1.47 to 1.51eV.