Regensburg 2002 – scientific programme
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HL: Halbleiterphysik
HL 23: II-VI Halbleiter
HL 23.12: Talk
Tuesday, March 12, 2002, 18:00–18:15, H17
Properties of pulsed-laser-deposited Zn1−x(Al, Ga, Mg, Cd)xO compound thin films — •C. Bundesmann1, N. Ashkenov1, A. Kasic1, V. Riede1, M. Schubert1, E. M. Kaidashev2, M. Lorenz1, R. Schmidt1, B. Rheinländer1, J. Lenzner1, H. v. Wenckstern1, and M. Grundmann1 — 1Fakultät für Physik und Geowissenschaften, Institut für Experimentalphysik II, Universität Leipzig, Linnéstraße 5, 04103 Leipzig — 2Rostov State University, Mechanics and Applied Mathematics Research Institute
ZnO-based compound materials are attractive for possible applications as transparent contacts in display technology, for p-n junctions transparent for visible light, and for short-wavelength coherent or incoherent light emitting heterostructures. Here we review our recent results obtained upon growth and characterization of Al- and Ga-doped ZnO and (ZnCdMg)O thin films, deposited on c-plane sapphire using the pulsed-laser-deposition technique. We report on fundamental structural and physical properties such as lattice constants, phonon modes, free-carrier concentration and mobility, band-to-band transitions and complex index of refraction spectra obtained from high-resolution x-ray diffraction, spectroscopic ellipsometry, photoluminescence, cathodoluminescence, Raman scattering, and Hall-effect measurements.