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HL: Halbleiterphysik

HL 23: II-VI Halbleiter

HL 23.12: Vortrag

Dienstag, 12. März 2002, 18:00–18:15, H17

Properties of pulsed-laser-deposited Zn_1−x(Al, Ga, Mg, Cd)_xO compound thin films — •C. Bundesmann¹, N. Ashkenov¹, A. Kasic¹, V. Riede¹, M. Schubert¹, E. M. Kaidashev², M. Lorenz¹, R. Schmidt¹, B. Rheinländer¹, J. Lenzner¹, H. v. Wenckstern¹, and M. Grundmann¹ — ¹Fakultät für Physik und Geowissenschaften, Institut für Experimentalphysik II, Universität Leipzig, Linnéstraße 5, 04103 Leipzig — ²Rostov State University, Mechanics and Applied Mathematics Research Institute

ZnO-based compound materials are attractive for possible applications as transparent contacts in display technology, for p-n junctions transparent for visible light, and for short-wavelength coherent or incoherent light emitting heterostructures. Here we review our recent results obtained upon growth and characterization of Al- and Ga-doped ZnO and (ZnCdMg)O thin films, deposited on c-plane sapphire using the pulsed-laser-deposition technique. We report on fundamental structural and physical properties such as lattice constants, phonon modes, free-carrier concentration and mobility, band-to-band transitions and complex index of refraction spectra obtained from high-resolution x-ray diffraction, spectroscopic ellipsometry, photoluminescence, cathodoluminescence, Raman scattering, and Hall-effect measurements.