Dresden 2003 – wissenschaftliches Programm

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DS: Dünne Schichten

DS 17: Ionenimplantation II

DS 17.3: Vortrag

Donnerstag, 27. März 2003, 10:45–11:00, GER/37

Synthesis of iron nitrides by N²⁺ ion implantation in ⁵⁷Fe/Si bilayers — •Velimir Milinovic¹, Natasa Bibic^1,2, Sankar Dhar¹, Klaus-Peter Lieb¹, Momir Milosavljevic², Martin Weisheit³, Hans-Ulrich Krebs³, and Peter Schaaf¹ — ¹Universität Göttingen, Zweites Physikalisches Institut, Bunsenstrasse 7-9, 37073 Göttingen, Germany — ²The Institute of Nuclear Sciences VINCA, Atomic Physics Laboratory, P.O.Box 522, 11001 Belgrade, Yugoslavia — ³Universität Göttingen, Institut für Materialphysik, Hospitalstrasse 7-9, 37073 Göttingen, Germany

The evolution of iron nitrides through nitrogen ion irradiation of ⁵⁷Fe/Si bilayers at ambient temperature, was investigated. The ⁵⁷Fe layer were deposited to a thickness of 30 nm on a Si(100) wafer by pulsed laser deposition. After deposition, the samples were irradiated with 22 keV N²⁺ ions at various fluences, from 0.7 − 10¹⁷ ions/cm². The N²⁺ ions were supplied by an electron cyclotron resonance ion source at the TESLA facility in Vinca, Belgrade. All samples were analyzed in Göttingen by Rutherford backscattering spectroscopy (RBS), X-ray diffraction analysis (XRD) and conversion electron Mössbauer spectroscopy (CEMS). The CEMS and XRD results clearly show the evolution of iron nitride phase. For fluences in the range of about 1 × 10¹⁷ ions/cm² the mixture of ε-Fe₂N phase and α-Fe with Si as a substitution and N interstitial atoms was observed, while, for the highest fluence of 2.1 × 10¹⁷ ions/cm², predominantly the paramagnetic ε-Fe₂N phase was detected. It can be concluded that the iron layer fully reacted.