Dresden 2003 – wissenschaftliches Programm

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DS: Dünne Schichten

DS 17: Ionenimplantation II

DS 17.9: Vortrag

Donnerstag, 27. März 2003, 12:15–12:30, GER/37

Solid Phase Epitaxial Growth of α-quartz after Rb-ion implantation and annealing in oxygen — •S. Gasiorek^1,2, S. Dhar¹, K.-P. Lieb¹, T. Sajavaara³, and J. Keinonen³ — ¹Zweites Physikalisches Institut, Universität Göttingen, Bunsenstrasse 7/9, D-37073 Göttingen, Germany — ²The Henryk Niewodniczański Institute of Nuclear Physics, ul. Radzikowskiego 152, 31-342 Kraków, Poland — ³Accelerator Laboratory, University of Helsinki, FIN-00014 Helsinki, Finland

The Solid Phase Epitaxial Regrowth (SPEG) of 175 keV Rb⁺ implanted α-quartz was studied during thermal annealing in air or in ¹⁸O₂ up to 1170 K. The recovery of radiation damage and epitaxy was investigated in detail as a function of the implanted Rb content, temperature, and the ¹⁸O₂ pressure. The evolution of the damage layer and Rb depth distributions was examined by Rutherford backscattering spectrometry in channeling geometry (RBS-C). Time-of-flight elastic recoil detection analysis (TOF-ERDA) of the ¹⁶O and ¹⁸O profiles monitors the role of the oxygen exchange between the annealing gas and SiO₂ matrix. Complete solid-phase epitaxial regrowth (SPEG) of the amorphized layers was observed after a 1-h annealing in air (at 1170 K) or in ¹⁸O₂ (at 1130 K). The regrowth kinetic during air annealing follows a two-stages Arrhenius process with activation energies of 3.6 ± 0.4 eV and 0.6 ± 0.2 eV above and below the 1070 K. The observed planar recrystallization of the amorphized α-SiO₂, the ¹⁶O ⇔ ¹⁸O exchange, and the related Rb migration are explained in terms of the SiO₂-network topology.