Dresden 2003 – scientific programme
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SYMN: Metallic nanowires
SYMN 1: Metallic nanowires I
SYMN 1.2: Invited Talk
Friday, March 28, 2003, 10:00–10:30, HSZ/01
Self-assembled Semiconductor Nanostructures studied with STM and Synchrotron Surface X-ray Diffraction — •Robert L. Johnson1, O. Bunk2, G. Falkenberg3, and C. Kumpf4 — 1Institut für Experimentalphysik, Universität Hamburg, Luruper Chaussee 149, D-22761 Hamburg, Germany — 2Risoe National Laboratory — 3HASYLAB — 4Universität Würzburg
Nanostructured semiconductor surfaces can be fabricated by the controlled deposition of metal atoms. Indium adsorbed on Ge(001) surfaces produces regular uniform arrays of {103}-facets with 6 nm periodicity. Such nanostructured surfaces provide templates for fabricating nanowires. The atomic-scale linear arrays of metal atoms found in metal-induced reconstructions on semiconductor surfaces are particularly interesting because they are both very small and robust. In this presentation the complementarity of the information provided by scanning tunneling microscopy and x-ray diffraction to reveal the detailed atomic structure of nanowires on silicon will be described.