Regensburg 2004 – scientific programme
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HL: Halbleiterphysik
HL 30: Photovoltaik II
HL 30.5: Talk
Wednesday, March 10, 2004, 16:15–16:30, H14
Structural, optical and electronic properties of Cu(In,Ga)S2 epitaxial layers and heterostructures on Si(111) — •Th. Hahn1, A. Chuvilin1, J. Cieslak1, A. Dietz1, J. Eberhardt1, R. Goldhahn2, M. Gossla1, F. Hudert2, U. Kaiser1, J. Kräusslich3, H. Metzner1, U. Reislöhner1, H.-W. Schock4, S. Siebentritt5, W. Witthuhn1, and F. Wunderlich2 — 1Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik, Max-Wien-Platz 1, 07743 Jena — 2Institut für Physik, TU Ilmenau, PF 100565, 98684 Ilmenau — 3Friedrich-Schiller-Universität Jena, Institut für Optik und Quantenelektronik Max-Wien-Platz 1, 07743 Jena — 4Universität Stuttgart, Institut für Physikalisches Elektronik, Pfaffenwaldring 47, 70569 Stuttgart — 5Hahn-Meitner-Institut, Abteilung Heterogene Materialsysteme, Glienicker Str. 100, 14109 Berlin
Epitaxial thin films of the quasi-ternary chalcopyrite compound CuIn1−xGaxS2 (0<x<1) (CIGS) were grown epitaxially on Si(111) substrates using Molecular Beam Epitaxy (MBE). The samples were characterized using X-Ray diffraction (XRD) in various geometries, High Resolution Transmission Electron Microscopy (HRTEM), Rutherford Backscattering Spectroscopy (RBS), and Photoreflection (PR).
The layers show a continuous variation of band gap, lattice constants, growth mechanism, and the appearence of various metastable orderings with x. First I(U)-characteristics of heteroepitaxial CIGS solar cells are presented, which were processed in a standard process involving KCN-etching, chemical bath deposition of CdS, and a ZnO:Al window layer.