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HL: Halbleiterphysik

HL 30: Photovoltaik II

HL 30.5: Vortrag

Mittwoch, 10. März 2004, 16:15–16:30, H14

Structural, optical and electronic properties of Cu(In,Ga)S₂ epitaxial layers and heterostructures on Si(111) — •Th. Hahn¹, A. Chuvilin¹, J. Cieslak¹, A. Dietz¹, J. Eberhardt¹, R. Goldhahn², M. Gossla¹, F. Hudert², U. Kaiser¹, J. Kräusslich³, H. Metzner¹, U. Reislöhner¹, H.-W. Schock⁴, S. Siebentritt⁵, W. Witthuhn¹, and F. Wunderlich² — ¹Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik, Max-Wien-Platz 1, 07743 Jena — ²Institut für Physik, TU Ilmenau, PF 100565, 98684 Ilmenau — ³Friedrich-Schiller-Universität Jena, Institut für Optik und Quantenelektronik Max-Wien-Platz 1, 07743 Jena — ⁴Universität Stuttgart, Institut für Physikalisches Elektronik, Pfaffenwaldring 47, 70569 Stuttgart — ⁵Hahn-Meitner-Institut, Abteilung Heterogene Materialsysteme, Glienicker Str. 100, 14109 Berlin

Epitaxial thin films of the quasi-ternary chalcopyrite compound CuIn_1−xGa_xS₂ (0<x<1) (CIGS) were grown epitaxially on Si(111) substrates using Molecular Beam Epitaxy (MBE). The samples were characterized using X-Ray diffraction (XRD) in various geometries, High Resolution Transmission Electron Microscopy (HRTEM), Rutherford Backscattering Spectroscopy (RBS), and Photoreflection (PR).

The layers show a continuous variation of band gap, lattice constants, growth mechanism, and the appearence of various metastable orderings with x. First I(U)-characteristics of heteroepitaxial CIGS solar cells are presented, which were processed in a standard process involving KCN-etching, chemical bath deposition of CdS, and a ZnO:Al window layer.