Regensburg 2004 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 32: Halbleiterlaser I
HL 32.3: Vortrag
Mittwoch, 10. März 2004, 18:15–18:30, H17
Modeling of optical properties for type-II semiconductor lasers — •Christoph Schlichenmaier1, Jörg Hader2, Jerry V. Molony2, Angela Thränhardt1, Mackillo Kira1, and Stephan W. Koch1 — 1Philipps-Universität & Wissenschaftliches Zentrum für Materialwissenschaften Marburg — 2Arizona Center for Mathematical Sciences and Optical Sciences Center, University of Arizona, Tucson, AZ 85721
Design of advanced semiconductor laser structures demands the insightful use of compound materials consisting of many constituents. Smart alignment of heterostructure layers like type-II structures is an additional way of band gap engineering. Quantum optical modeling of electron and photon dynamics[1,2] connected with a realistic band structure explains optical properties and device performance and helps to map out the parameter space. We discuss gain, α-factors and luminescence for various systems.
[1] A. Girndt, S.W. Koch, and W.W. Chow, Appl. Phys. A 66, 1 (1998).
[2] M. Kira, F. Jahnke, W. Hoyer, and S.W. Koch, Prog. Quantum Electron. 23, 189 (1999).