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O: Oberflächenphysik
O 39: Epitaxie und Wachstum III
O 39.3: Vortrag
Donnerstag, 11. März 2004, 16:15–16:30, H39
Growth of CoSi2 islands on Si(111) — •M. Löffler1, J. Cordon2, E. Ortega2, M. Weinelt1, and Th. Fauster1 — 1Lehrstuhl für Festkörperphysik, Staudtstraße 7, 91058 Erlangen, Germany — 2Donostia International Physics Center, Apto. 1072 , 20080 San Sebastian, Spain
Ultrathin cobalt silicide films deposited at room temperature on
Si(111) grow as flat films for annealing temperatures below
500∘C, but agglomerate for higher annealing temperatures
[1]. With scanning tunneling microscopy we investigated this
agglomeration process on flat and stepped Si(111) samples. For
annealing temperatures higher than 700∘C triangular islands
grow on the flat surface, while on the stepped surface the growth
of the islands perpendicular to the step edges is suppressed: For
deposition at room temperature and subsequent annealing the aspect
ratio (width parallel divided by width perpendicular to
step edges) reaches a value around 3 at an annealing temperature of
900∘C.
The growth of the cobalt silicide islands can be influenced by the
mobility of the different species during the growth process.
Deposition at 800∘C sample temperature on the flat surface
produces bigger triangular islands, while on the stepped sample we
can enlarge the aspect ratio to 9.
[1] B. Ilge et al., Surf. Sci. 414 (1998), 279