Regensburg 2004 – wissenschaftliches Programm

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SYOH: Organic and Hybrid Systems for Future Electronics

SYOH 5: Poster

SYOH 5.65: Poster

Donnerstag, 11. März 2004, 18:00–21:00, B

In situ electrical characterization of DH4T transistors — •T. Muck¹, V. Wagner¹, M. Leufgen², J. Geurts², E. Bentes³, and H. L. Gomes³ — ¹International University Bremen, School of Engineering and Science, Campus Ring 8, D-28759 Bremen — ²Experimentelle Physik II, Universität Würzburg, Am Hubland, D-97074 Würzburg — ³University of the Algarve, Campus de Gambelas, FCT, 8000, Portugal

The performance of organic field effect transistors (OFETs) was improved over the last years enormously, e.g., dihexyl-quaterthiohene (DH4T) has proven high mobility values and is compatible with cheap solution processing, which is of high interest due to low cost production. The transport properties of OFETs are influenced by different parameters, e.g., temperature, film morphology, and the ambient atmosphere. For a systematic analysis we performed in situ electrical measurements on DH4T thin film transistors during the deposition of the active layer onto prepatterned templates by organic molecular beam deposition (OMBD). Here we get information about the charge transport in the first monolayers and the dependence of the mobility values on film thickness. Results for different substrate temperatures will be discussed, including the phase transition of the active layer at elevated temperatures.
Applying a gate voltage leads to filling of traps (bias stress). This effect is influenced by the ambient atmosphere. Performing these measurements in situ as well as in air enables us to systematically analyze these stress effects.