Regensburg 2004 – scientific programme
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SYOH: Organic and Hybrid Systems for Future Electronics
SYOH 5: Poster
SYOH 5.65: Poster
Thursday, March 11, 2004, 18:00–21:00, B
In situ electrical characterization of DH4T transistors — •T. Muck1, V. Wagner1, M. Leufgen2, J. Geurts2, E. Bentes3, and H. L. Gomes3 — 1International University Bremen, School of Engineering and Science, Campus Ring 8, D-28759 Bremen — 2Experimentelle Physik II, Universität Würzburg, Am Hubland, D-97074 Würzburg — 3University of the Algarve, Campus de Gambelas, FCT, 8000, Portugal
The performance of organic field effect transistors (OFETs) was improved
over the last years
enormously, e.g., dihexyl-quaterthiohene (DH4T) has proven high mobility
values and is compatible with cheap solution processing, which is of
high interest due to low cost production.
The transport properties of OFETs are influenced by different
parameters, e.g., temperature, film morphology, and the ambient
atmosphere. For a systematic analysis we performed in situ
electrical measurements on DH4T thin film transistors during the
deposition of the active layer onto prepatterned templates by organic
molecular beam deposition (OMBD). Here we get information about the
charge transport in the first monolayers and the dependence of the
mobility values on film thickness. Results for different substrate
temperatures will be discussed, including the phase transition of the
active layer at elevated temperatures.
Applying a gate voltage leads to filling of traps (bias stress). This
effect is influenced by the ambient atmosphere. Performing these
measurements in situ as well as in air enables us to
systematically analyze these stress effects.