Berlin 2005 – wissenschaftliches Programm
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DS: Dünne Schichten
DS 10: FV-internes Symposium „Anorganische Dielektrika für die künftige Mikro- und Nanotechnologie"
DS 10.2: Hauptvortrag
Samstag, 5. März 2005, 10:45–11:30, TU HS110
Epitaxial growth of oxide layers on silicon surfaces — •Wolfgang Moritz1, Nicole Jeutter1, Laure Libralesso2, and Jörg Zegenhagen2 — 1Dept. of Earth and Environmental Sciences, LMU München — 2ESRF, Grenoble, France
In the search for high-k dielectrics to replace the SiO2 layer in silicon based devices only few materials have been found so far. The oxides have to be thermodynamically stable in contact with Si at temperatures up to 1000∘ C and the formation of interfacial SiO2 layers has to be avoided. Among the possible materials are oxides with the perowskite type structure, Ba/SrTiO3 and rare earth oxides like Pr2O3, Y2O3 and CeO2. The current status of the growth of epitaxial oxide layers is reviewed. Most promising is Pr2O3 which forms well ordered epitaxial layers on the Si(111) surface and which can be overgrown by Si. Results from X-ray diffraction and LEED show the initial stages of growth and an SiO2 free interface structure. On the (100) surface the growth of oxide layers in general leads to layers with lower crystalline quality due to rotational domains. These are avoided on the Si(113) surface and first results for growth studies of Pr2O3 on this substrate orientation are presented. A further promising field seems to be the growth of layers of ternary oxides which have rarely been studied up to now, except for the perowskite type structures. First results for the growth of aluminosilicates are presented.