Berlin 2005 – wissenschaftliches Programm

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DS: Dünne Schichten

DS 18: Optische Spektroskopie dünner Schichten I

DS 18.1: Vortrag

Montag, 7. März 2005, 15:15–15:30, TU HS110

Infrared ellipsometric study of electrochemically grafted organic layers on TiO₂ and Si — •Katy Roodenko¹, Michael Gensch¹, Jörg Rappich², Ullrich Schade³, Ralf Hunger⁴, Thomas Dittrich⁵, Alexandra Merson⁶, Yoram Shapira⁶, Norbert Esser¹, and Karsten Hinrichs¹ — ¹ISAS - Department Berlin, Albert-Einstein-Str. 9, 12489 Berlin — ²HMI, Abteilung SE1, Kekulestr. 5, 12489 Berlin — ³BESSY, Albert-Einstein Str.15, 12489 Berlin — ⁴Institute of Material Science, TU Darmstadt, Petersenstr.63, 64287 Darmstadt — ⁵HMI, Abteilung SE2, Glienicker Str. 100, 14109 Berlin — ⁶Department of Physical-Electronics, Faculty of Engineering, Tel-Aviv University, 69978 Tel-Aviv, Israel

Infrared spectroscopic ellipsometry (IR-SE) has been applied for the characterization of electrochemically grafted thin nitrobenzene layers on TiO₂ and Si. An optical layer model was used for the interpretation of ellipsometric spectra. This allowed a determination of the high frequency refractive index, molecular orientation and the thickness of the grafted films on the TiO₂. The earlier derived optical constants for ultra thin nitrobenzene films less than 2nm on Si(001) [1] were used as an input data in these calculations. The results were confirmed by additional methods, such as VIS-ellipsometry and X-ray photoemission spectroscopy (XPS). [1] M. Gensch et al, The use of infrared spectroscopic ellipsometry for studying ultra thin organic layers: nitrobenzene on Si(001), submitted for publication