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Berlin 2005 – scientific programme

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HL: Halbleiterphysik

HL 16: Poster Ia

HL 16.20: Poster

Friday, March 4, 2005, 16:30–19:00, Poster TU E

Ballistic rectification processes in crossed electron-waveguide devices — •Michael Knop1, Ulrich Wieser1, Ulrich Kunze1, Dirk Reuter2, and Andreas D. Wieck21Lehrstuhl für Werkstoffe und Nanoelektronik, Ruhr-Universität Bochum, Germany — 2Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, Germany

We investigate ballistic rectification processes in nanoscale four-terminal field effect devices with broken symmetry. The electron-waveguide injection leads are oppositely attached to a 200-400 nm wide and 2.5 µm long central channel which provides voltage probes. The angle between the injection leads and the central channel is varied between 30 and 90. The devices are fabricated by a mix-and-match process combining high-resolution electron-beam and conventional photo lithography from a GaAs/AlGaAs heterostructure. The conductance characteristics of the injection leads show quantized conductance. Dc measurements in three-terminal configuration, one voltage probe remains unused, show ballistic rectification due to different mode population in the injection leads. In the four-terminal configuration we observe a rectification signal arising from the inertia ballistic motion of the injected electrons.

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