Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

HL: Halbleiterphysik

HL 30: II-VI Halbleiter III

HL 30.2: Vortrag

Samstag, 5. März 2005, 15:15–15:30, TU P164

Luminescence bands in acceptor doped ZnO — •Daniel Pfisterer¹, Joachim Sann¹, Frank Leiter¹, Arndt Zeuner¹, Christian Neumann¹, Bruno K. Meyer¹, Detlev M. Hofmann¹, and Nikolaj Romanov² — ¹I. Physikalisches Institut, Justus-Liebig-Universität, Heinrich-Buff-Ring 16, D-35392 Giessen — ²A.F. Ioffe Physico-Technical Institute, RAS, 194021 St. Petersburg, Russia

We have used electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR) to characterise various ZnO samples doped with group I acceptors (Li, Na) or the group V nitrogen acceptor, as well as ZnO powders thermally treated in nitrogen atmosphere. For the group I acceptors the PL response of the ODMR shows that Li and Na cause deep luminescence bands. The spectra are compared to the emission caused by oxygen vacancies. An omnipresent resonance at g = 2.006 is related to an emission at 1.65 eV and is likely to be caused by Zn-vacancies. The isolated nitrogen acceptors (N⁻) are found to quench the donor acceptor pair recombination at 3.26 eV.