Berlin 2005 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
HL: Halbleiterphysik
HL 30: II-VI Halbleiter III
HL 30.2: Vortrag
Samstag, 5. März 2005, 15:15–15:30, TU P164
Luminescence bands in acceptor doped ZnO — •Daniel Pfisterer1, Joachim Sann1, Frank Leiter1, Arndt Zeuner1, Christian Neumann1, Bruno K. Meyer1, Detlev M. Hofmann1, and Nikolaj Romanov2 — 1I. Physikalisches Institut, Justus-Liebig-Universität, Heinrich-Buff-Ring 16, D-35392 Giessen — 2A.F. Ioffe Physico-Technical Institute, RAS, 194021 St. Petersburg, Russia
We have used electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR) to characterise various ZnO samples doped with group I acceptors (Li, Na) or the group V nitrogen acceptor, as well as ZnO powders thermally treated in nitrogen atmosphere. For the group I acceptors the PL response of the ODMR shows that Li and Na cause deep luminescence bands. The spectra are compared to the emission caused by oxygen vacancies. An omnipresent resonance at g = 2.006 is related to an emission at 1.65 eV and is likely to be caused by Zn-vacancies. The isolated nitrogen acceptors (N−) are found to quench the donor acceptor pair recombination at 3.26 eV.