DPG Phi
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DPG

Berlin 2005 – scientific programme

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HL: Halbleiterphysik

HL 64: Photovoltaik II

HL 64.8: Talk

Wednesday, March 9, 2005, 12:30–12:45, TU P-N202

ESTIMATION OF INTERFACE DEFECT DISTRIBUTION IN A-SI:H/C-SI HETEROSTRUCTURES — •Saioa Tardon, Gottfried H. Bauer, and Rudolf Brueggemann — Institut fuer Physik, Carl-von-Ossietzsky Universitaet Oldenburg, AG GRECO, 26111 Oldenburg

According to Planck’s generalized law, photon flux emitted from matter is related to the splitting of the quasi-Fermi levels. We have recorded room temperature photoluminescence yield from p-doped crystalline silicon wafer structures after each step of solar cell processing such as rear contact and hetero-interface preparation and translated into the splitting of quasi-Fermi energies. Numerical simulations of identical structures and measurement conditions have been performed in order to fit the calculated pl-yields to experimental ones. An interfacial defect layer with a Gaussian distribution has been considered at the hetero junction and the energy position of the peak EpEV has been varied from 0.2 to 0.9 eV. The energetic position of interface defects strongly influences band bending, the occupation of dangling bonds, and consequently the splitting of quasi-fermi levels and final maximal open circuit voltage of a-si:H/c-Si heterojunction solar cells.

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