Berlin 2005 – wissenschaftliches Programm

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MA: Magnetismus

MA 33: Messmethoden, Anisotropie, Spinelektronik/Spininjektion

MA 33.9: Vortrag

Mittwoch, 9. März 2005, 13:00–13:15, TU EMH225

Magnetic tunneling junctions with the Co₂Cr_0.6Fe_0.4Al Heusler compound — •Andrés Conca, Martin Jourdan, Gerhard Jakob, and Hermann Adrian — Institut für Physik, Johannes Gutenberg Universität, Staudinger Weg 7, 55128, Mainz, Germany.

The use of half metallic electrodes in magnetic tunnelling junctions (MTJ’s) will result in a large increase of the TMR ratio. We used the full Heusler alloy Co₂Cr_0.6Fe_0.4Al as bottom electrode for MTJ’s. This compound is expected to show half metallicity.

The junctions were deposited in a chamber with a base pressure of 3.0·10⁻⁸ mbar by dc magnetron sputtering using metallic shadow masks with Co as counter electrode and AlO_x as barrier. We present measurements of the magnetoresistive differential conductivity between 4 and 300K. The properties of the barrier are analyzed by applying the Simmons model to the bias dependent differential conductivity. Magnetic properties of the junctions were analyzed by VSM, SQUID and Kerr effect methodes.