Berlin 2005 – wissenschaftliches Programm

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O: Oberflächenphysik

O 41: Elektronische Struktur III

O 41.2: Vortrag

Dienstag, 8. März 2005, 11:00–11:15, TU EB107

Electronic structure of misfit layer chalcogenides — •Matthias Kalläne¹, Hans Starnberg², Kai Rossnagel¹, Sven Stoltz², and Lutz Kipp¹ — ¹Institut für Experimentelle und Angewandte Physik, Universität Kiel, D-24098, Germany — ²Department of Physics, Göteborg University and Chalmers University of Technology, SE-412 96 Göteborg, Sweden

Misfit layer chalcogenides (MX)_1+x(TX₂)_m (M=Sn, Pb, Sb, Bi; T=Ti, V, Cr, Nb, Ta; X=S, Se; 0.08<x<0.28; m=1,2,3) result from an alternate stacking of MX and TX₂ slabs where the cubic MX layers are incommensurate with the hexagonal TX₂ layers in one of the two crystallographic directions parallel to the layers. To reach a better understanding of the electronic structure of these compounds we have performed angle-resolved photoelectron spectroscopy and photoelectron spectromicroscopy experiments. Our results reveal details about charge transfer from the MX to the TX₂ layers, interlayer bonding, possible effects of the incommensurability, and the domain structure of the cleavage planes. The photoemission experiments were carried out at HASYLAB (Germany), MAXLAB (Sweden), and the ALS (USA). Work at the University of Kiel is supported by DFG Forschergruppe FOR 353.