Dresden 2006 – scientific programme

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DF: Dielektrische Festkörper

DF 3: Poster Session

DF 3.20: Poster

Monday, March 27, 2006, 09:30–17:00, P1

Electrical, photoelectrical and optical properties of Ru-doped Bi₁₂M(Si,Ti)O₂₀ crystals — •Vera Marinova¹, S. H. Lin², K. Y. Hsu², Boriana Mihailova¹, and Ulrich Bismayer¹ — ¹Universität Hamburg, Mineralogisch-Petrographisches Institut, Grindelallee 48, D-20146 Hamburg — ²Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30050, Taiwan

Bi₁₂TiO₂₀ (BTO) and Bi₁₂SiO₂₀ (BSO) sillenite-type crystals doped with different concentration of ruthenium are grown using the Top Seeded Solution Growth method (TSSG) and by the Czochralski technique, respectively. The addition of ruthenium shifts the optical absorption to the red and to the near IR spectral range for BSO and BTO, respectively. It is found that the relaxation (dark decay) of the light induced absorption consists of fast (transient) and a slow (persistent) component, suggesting participation of shallow levels in a charge-transport mechanism. The dark conductivity follows the Arrhenius law. The Ru-doped BSO crystal shows very fast response time during holographic recording at 633 nm and 647 nm. The Ru-doped BTO possesses infrared sensitivity and photorefractive gratings are successfully recorded at 790 nm and 825 nm.