Dresden 2006 – scientific programme
Parts | Days | Selection | Search | Downloads | Help
DS: Dünne Schichten
DS 22: Thin film deposition and process characterization II
DS 22.3: Talk
Thursday, March 30, 2006, 14:30–14:45, GER 38
At wavelength inspection of extreme ultraviolet lithography mask blank defects by photoemission electron microscopy — •Jingquan Lin1, Andreas Oelsner2, Nils Weber3, Ulrich Neuhäusler1, Jawad Slieh1, Armin Brechling1, Dimitrii Valdaitsev2, Michael Merkel3, Gerhard Schönhense2, Ulf Kleineberg1, and Ulrich Heinzmann1 — 1Faculty of Physics, University Bielefeld, D-33615 Bielefeld — 2Institute of Physics, University of Mainz, D-55128 Mianz — 3Focus GmbH, D-65510 Hünstwetten-Gorsröth
Extreme ultraviolet lithography (EUVL) is one the leading next-generation lithography candidates for fabricating integrated circuits with a feature size of 45 nm and below. According to International Semiconductor Road map, density of defects on EUV mask blank must be reduced to the level of 0.005 defects per cm2. Here we report a new actinic EUVL mask defect inspection approach, in which EUV photoemission electron microscopy (PEEM) technique was used. The actinic inspection experiment was performed with a standing wave field illumination PEEM at BESSY II. Experimental results show that buried defects with lateral sizes down to 50 nm in a mask blank sample are detectable. Our EUV PEEM also demonstrates the ability to detect phase defects with height as low as 6 nm in a programmed line-space sample. Moreover, we found that the contrast of a multilayer phase defect in the PEEM image is strongly dependent on the inspecting wavelength, eg. showing a contrast reversal when changing the illumination wavelength from 12.5 nm to 13.8 nm.