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DS: Dünne Schichten

DS 22: Thin film deposition and process characterization II

DS 22.3: Vortrag

Donnerstag, 30. März 2006, 14:30–14:45, GER 38

At wavelength inspection of extreme ultraviolet lithography mask blank defects by photoemission electron microscopy — •Jingquan Lin¹, Andreas Oelsner², Nils Weber³, Ulrich Neuhäusler¹, Jawad Slieh¹, Armin Brechling¹, Dimitrii Valdaitsev², Michael Merkel³, Gerhard Schönhense², Ulf Kleineberg¹, and Ulrich Heinzmann¹ — ¹Faculty of Physics, University Bielefeld, D-33615 Bielefeld — ²Institute of Physics, University of Mainz, D-55128 Mianz — ³Focus GmbH, D-65510 Hünstwetten-Gorsröth

Extreme ultraviolet lithography (EUVL) is one the leading next-generation lithography candidates for fabricating integrated circuits with a feature size of 45 nm and below. According to International Semiconductor Road map, density of defects on EUV mask blank must be reduced to the level of 0.005 defects per cm². Here we report a new actinic EUVL mask defect inspection approach, in which EUV photoemission electron microscopy (PEEM) technique was used. The actinic inspection experiment was performed with a standing wave field illumination PEEM at BESSY II. Experimental results show that buried defects with lateral sizes down to 50 nm in a mask blank sample are detectable. Our EUV PEEM also demonstrates the ability to detect phase defects with height as low as 6 nm in a programmed line-space sample. Moreover, we found that the contrast of a multilayer phase defect in the PEEM image is strongly dependent on the inspecting wavelength, eg. showing a contrast reversal when changing the illumination wavelength from 12.5 nm to 13.8 nm.