Parts | Days | Selection | Search | Downloads | Help
HL: Halbleiterphysik
HL 26: II-VI semiconductors II
HL 26.13: Talk
Tuesday, March 28, 2006, 18:15–18:30, POT 51
ZnO films doped with rare earth metals — •M. Diaconu1, H. Schmidt1, H. Hochmuth1, H. von Wenckstern1, D. Spemann1, M. Lorenz1, M. Grundmann1, M. Fecioru-Morariu2, K. Schmalbuch2, and G. Güntherodt2 — 1Inst. für Exp. Physik II, Fakultät für Physik, Uni. Leipzig, Linnestrasse 3-5, 04103 Leipzig — 2II. Physikalisches Institut, RWTH Aachen, Physikzentrum Melaten, Huyskensweg Turm 28B, 52074 Aachen
The electrical and magnetic properties of ZnO:Gd and ZnO:Nd were studied for films grown by pulsed laser deposition on a-plane sapphire. Different growth conditions were used to prepare ZnREO films with RE = Gd or Nd contents around 0.01, 0.1 or 1 at% and thicknesses from 50 nm to 1000 nm. The rare earth concentration and position in the wurtzite lattice were determined by Rutherford backscattering and particle induced X-ray emission. Hall investigations revealed a dependence of the electrical properties on film thickness and composition. Magnetic properties were investigated in a wide temperature range using a superconducting quantum interference device and magneto-optical Kerr effect.