Dresden 2006 – scientific programme
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HL: Halbleiterphysik
HL 50: Poster II
HL 50.24: Poster
Thursday, March 30, 2006, 16:30–19:00, P3
Waveguide mode dynamics of InGaN laser diodes — •Christoph Lauterbach1, Ulrich Schwarz1, Alfred Lell2, and Volker Härle2 — 1Institut für Experimentelle und Angewandte Physik, Universität Regensburg, 93040 Regensburg — 2OSRAM Opto Semiconductors GmbH, Wernerwerkstr. 2, 93049 Regensburg
We use a scanning near-field microscope (SNOM) in combination with a time resolved detection scheme to measure the evolution of the near-field and far-field of InGaN laser diode (LD) waveguide modes. We observe lateral mode competition, filamentation, and beam steering. Here we compare the lateral mode dynamics for ridge waveguide LDs and oxide stripe LDs which are predominantly index and gain guided, respectively. We observe a distinct difference in the mode dynamics for ridge waveguide and oxide stripe LDs. For the former the spatio-temporal pattern resembles the mode behavior of a hard wall box defined by the edge of the ridge. For the latter the soft confinement defined by the gain guiding profile leads to a better centering of the mode and a more stable mode pattern. Filamentation affects both ridge waveguide and oxide stripe LDs in a similar manner.