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HL: Halbleiterphysik

HL 50: Poster II

HL 50.24: Poster

Donnerstag, 30. März 2006, 16:30–19:00, P3

Waveguide mode dynamics of InGaN laser diodes — •Christoph Lauterbach¹, Ulrich Schwarz¹, Alfred Lell², and Volker Härle² — ¹Institut für Experimentelle und Angewandte Physik, Universität Regensburg, 93040 Regensburg — ²OSRAM Opto Semiconductors GmbH, Wernerwerkstr. 2, 93049 Regensburg

We use a scanning near-field microscope (SNOM) in combination with a time resolved detection scheme to measure the evolution of the near-field and far-field of InGaN laser diode (LD) waveguide modes. We observe lateral mode competition, filamentation, and beam steering. Here we compare the lateral mode dynamics for ridge waveguide LDs and oxide stripe LDs which are predominantly index and gain guided, respectively. We observe a distinct difference in the mode dynamics for ridge waveguide and oxide stripe LDs. For the former the spatio-temporal pattern resembles the mode behavior of a hard wall box defined by the edge of the ridge. For the latter the soft confinement defined by the gain guiding profile leads to a better centering of the mode and a more stable mode pattern. Filamentation affects both ridge waveguide and oxide stripe LDs in a similar manner.