Dresden 2006 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 9: Poster I
HL 9.14: Poster
Montag, 27. März 2006, 15:15–17:45, P3
Carrier relaxation dynamics in annealed and hydrogenated (GaIn)(NAs)/GaAs quantum wells — •Torben Grunwald1, Kristian Hantke1, Jörg D. Heber1, Sangam Chatterjee1, Peter J. Klar1, Kerstin Volz1, Wolfgang Stolz1, Antonio Polimeni2, Mario Capizzi2, and Wolfgang Rühle1 — 1Faculty of Physics and Material Sciences Center, Philipps-Universität Marburg, Renthof 5, D-35032 Marburg, Germany — 2CNISM-Dipartimento di Fisica, Universitá di Roma, Piazzale A. Moro 2, I-00182 Roma, Italy
We measured time-resolved photoluminescence on as-grown, annealed, as well as annealed and hydrogenated (Ga0.7In0.3)(N0.006As0.994)/GaAs quantum well structures. The post-growth treatment changes not only the photoluminescence decay time but also the intensity of photoluminescence directly after excitation. This initial luminescence intensity is determined by a competition between relaxation of electrons into nitrogen related potential fluctuations in the conduction band and their capture by deep traps. In contrast, the decay of the photoluminescence is mainly determined by the competition between radiative and nonradiative recombination, which are both influenced by localization. Annealing decreases localization effects and nonradiative recombination. Hydrogenation also reduces localization effects but increases nonradiative recombination.