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DS: Fachverband Dünne Schichten

DS 26: Oxides

DS 26.3: Vortrag

Donnerstag, 29. März 2007, 15:30–15:45, H34

Epitaxially stabilized growth of orthorhombic LuScO₃ thin films — •Tassilo Heeg¹, Martin Roeckerath¹, Jürgen Schubert¹, Willi Zander¹, Christoph Buchal¹, Han Yuan Chen², Chunlin Jia², Yunfa Jia³, Carolina Adamo³, and Darrell G. Schlom³ — ¹Institute of Bio- and Nanosystems (IBN1-IT), and Centre of Nanoelectronic Systems for Information Technology (cni), Forschungszentrum Jülich GmbH, 52425 Jülich, Germany — ²Ernst-Ruska-Centre for Microscopy and Spectroscopy with Electrons (ER-C), and Institute of Solid State Research (IFF), Forschungszentrum Jülich GmbH, 52425 Jülich, Germany — ³Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802-5005, USA

Lutetium scandate (LuScO₃) thin films of 10 - 800 nm in thickness have been prepared by molecular beam epitaxy and pulsed laser deposition on different substrates. Stoichiometry and crystallinity were investigated using Rutherford backscattering spectrometry/channelling, X-ray diffraction and transmission electron microscopy. The results indicate that LuScO₃, which normally only exists as solid solution of Sc₂O₃ and Lu₂O₃, could be grown in the orthorhombically distorted perovskite structure. A good crystalline quality (rocking curve FWHM of 0.05^∘) was gained, and a critical film thickness of around 200 nm for the epitaxial stabilization of the perovskite phase of LuScO₃ on NdGaO₃(110) substrates was determined.