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Regensburg 2007 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 13: Poster 1

HL 13.73: Poster

Monday, March 26, 2007, 15:00–17:30, Poster A

Influence of thermal annealing on the memory effect in MIS structures containing crystalline Si nanoparticlesNicola Nedev1, Diana Nesheva2, Emil Manolov2, Rudolf Brüggemann3, •Sebastian Meier3, Kiril Kirilov4, and Zelma Levi21Instituto de Ingenieria Universidad Autónoma de Baja California, Benito Juárez Blvd., s/n, C.P. 21280, Mexicali, Baja California, México. — 2Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria. — 3Institut für Physik, Carl von Ossietzky Universität Oldenburg, 26111 Oldenburg, Germany. — 4Department of Solid State Physics and Microelectronics, Sofia University "St. Kliment Ohridski", 5 James Bourchier, 1164 Sofia, Bulgaria.

Silicon nanocrystals embedded in a SiO2 matrix are fabricated by thermal annealing of Metal/SiO2/SiOx/c-Si structures (x=1.15) at 1000 C in N2 atmosphere for 30 or 60 min. High frequency C-V measurements demonstrate that both types of sample can be charged negatively or positively by applying a positive or negative bias voltage to the gate. The clockwise hysteresis windows of 30 and 60 min annealed samples are about 7 and 5.5 V for the ± 12 V scanning range (Eox = ± 2.4 MV/cm), respectively. Although the samples annealed for 60 min have a smaller hysteresis window, they have two important advantages compared to the 30 min annealed ones: a lower defect density at the c-Si wafer/SiO2 interface and a smaller value of the fixed oxide charge close to this interface.

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