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Regensburg 2007 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 37: Symposium Graphene

HL 37.1: Invited Talk

Thursday, March 29, 2007, 10:00–10:30, H15

Photoelectron spectroscopy of graphene on SiC: growth, interface, and electronic structureA. Bostwick1, K.V. Emtsev2, K. Horn3, E. Huwald4, L. Ley2, J.L. McChesney2, T. Ohta1,3, J. Riley4, E. Rotenberg1, •Th. Seyller2, and F. Speck21Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California, USA — 2Lehrstuhl für Technische Physik, Universität Erlangen-Nürnberg, Germany — 3Fritz-Haber-Institut der Max-Planck-Gesellschaft, Berlin, Germany — 4Department of Physics, La Trobe University, Bundoora, Victoria, Australia

The possibilty to grow well ordered, ultra-thin graphite on SiC{0001} surfaces with thicknesses down to a single graphene layer is promising for future applications. Photoelectron spectroscopy (PES) is a versatile technique for investigating a variety of properties of this system which are of fundamental and technological interest. The talk will survey results from recent PES studies with a focus on the growth of ultrahin graphitic layers, the electronic and structural properties of the interface to the SiC substrate, and the electronic structure of the layers.

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