Regensburg 2007 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 37: Symposium Graphene
HL 37.1: Invited Talk
Thursday, March 29, 2007, 10:00–10:30, H15
Photoelectron spectroscopy of graphene on SiC: growth, interface, and electronic structure — A. Bostwick1, K.V. Emtsev2, K. Horn3, E. Huwald4, L. Ley2, J.L. McChesney2, T. Ohta1,3, J. Riley4, E. Rotenberg1, •Th. Seyller2, and F. Speck2 — 1Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California, USA — 2Lehrstuhl für Technische Physik, Universität Erlangen-Nürnberg, Germany — 3Fritz-Haber-Institut der Max-Planck-Gesellschaft, Berlin, Germany — 4Department of Physics, La Trobe University, Bundoora, Victoria, Australia
The possibilty to grow well ordered, ultra-thin graphite on SiC{0001} surfaces with thicknesses down to a single graphene layer is promising for future applications. Photoelectron spectroscopy (PES) is a versatile technique for investigating a variety of properties of this system which are of fundamental and technological interest. The talk will survey results from recent PES studies with a focus on the growth of ultrahin graphitic layers, the electronic and structural properties of the interface to the SiC substrate, and the electronic structure of the layers.