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HL: Fachverband Halbleiterphysik

HL 37: Symposium Graphene

HL 37.1: Hauptvortrag

Donnerstag, 29. März 2007, 10:00–10:30, H15

Photoelectron spectroscopy of graphene on SiC: growth, interface, and electronic structure — A. Bostwick¹, K.V. Emtsev², K. Horn³, E. Huwald⁴, L. Ley², J.L. McChesney², T. Ohta^1,3, J. Riley⁴, E. Rotenberg¹, •Th. Seyller², and F. Speck² — ¹Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California, USA — ²Lehrstuhl für Technische Physik, Universität Erlangen-Nürnberg, Germany — ³Fritz-Haber-Institut der Max-Planck-Gesellschaft, Berlin, Germany — ⁴Department of Physics, La Trobe University, Bundoora, Victoria, Australia

The possibilty to grow well ordered, ultra-thin graphite on SiC{0001} surfaces with thicknesses down to a single graphene layer is promising for future applications. Photoelectron spectroscopy (PES) is a versatile technique for investigating a variety of properties of this system which are of fundamental and technological interest. The talk will survey results from recent PES studies with a focus on the growth of ultrahin graphitic layers, the electronic and structural properties of the interface to the SiC substrate, and the electronic structure of the layers.