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DPG

Regensburg 2007 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 4: Semiconductor Laser I

HL 4.1: Talk

Monday, March 26, 2007, 10:45–11:00, H13

High-temperature measurements and reliability of red 660 nm AlGaInP-VCSEL — •Marcus Eichfelder1, Robert Roßbach1, Michael Jetter1, Heinz Schweizer2, and Peter Michler11Institut für Strahlenphysik, Allmandring 3, 70569 Stuttgart, Germany — 24. Physikalisches Institut, Pfaffenwaldring 57, 70569 Stuttgart, Germany

In this paper we discuss the potential and the possible limitations of the AlGaInP material system and its consequences for the application as vertical-cavity surface-emitting lasers (VCSEL). Epitaxial and technological solutions were presented to overcome some parts of the inherent problems. Measurements of internal heating of oxide-confined 660 nm AlGaInP-VCSEL are compared with calculated data by a cylindrical heat dissipation model to improve the heat removal out of the device. Pulsed lasing operation of a 660 nm VCSEL at +140C heatsink temperature is demonstrated, where we exceeded more than 0.5 mW and at 170C more than 0.1 mW output power was achieved. Continuous-wave measurements of our 660 nm devices show laser emission at 60C with an optical output power over 0.1 mW and operating times of more than 3700 hours without spontaneous failure.

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