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HL: Fachverband Halbleiterphysik

HL 46: Poster 2

HL 46.41: Poster

Donnerstag, 29. März 2007, 15:00–17:30, Poster A

Optical characterization of acceptors implanted into ZnO — •Joachim Dürr¹, Daniel Stichtenoth¹, Sven Müller¹, Carsten Ronning¹, Lars Wischmeier², Chegnui Bekeny², and Tobias Voss² — ¹II. Institute of Physics, University of Göttingen, Friedrich-Hund-Platz 1, 37073 Göttingen, Germany — ²Institute for Solid State Physics, University of Bremen, Bibliothekstraße 1, 28359 Bremen, Germany

Nitrogen and phosphorus are the most promising candidates for p-type doping of ZnO. We doped ZnO bulk crystals using ion implantation because this technique offers several advantages compared to other growth methods, e.g. precise control of the lateral and vertical dopant concentration even beyond solubility limits. After implantation and annealing of the introduced defects we performed photoluminescence measurements in order to monitor the optical activation of the dopants. Temperature- and power-dependent measurements reveal that a new line appearing at 3.23 eV for the N-implanted samples is due to Donor-Acceptor-Pair (DAP) transitions. We investigated the dependence of this feature on co-implantation as well as on the implantation and annealing temperature. First experiments on phosphorus-implanted ZnO will also be presented.