Regensburg 2007 – wissenschaftliches Programm
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MA: Fachverband Magnetismus
MA 12: Spindependent Transport I
MA 12.9: Vortrag
Dienstag, 27. März 2007, 12:15–12:30, H22
Inverted spin polarization of Heusler alloys — •Andy Thomas1, Dirk Meyners1, Daniel Ebke1, Ning-Ning Liu1, Jan Schmalhorst1, Guenter Reiss1, and Andreas Huetten1,2 — 1Bielefeld University, Thin films and nanostructures, Germany — 2Research Center Karlsruhe, Institute for Nano-technology, Germany
We prepared magnetic tunnel junctions with different Heusler compound electrodes and investigated the transport properties of these devices. The most striking feature of these structures is the inversion of the tunnel magnetoresistance (TMR) effect at certain bias voltages.
We use this feature to present a magnetic logic concept that overcomes the limitations of field programmable logic arrays while having a 50% smaller unit cell then conventional TMR designs. To reach that the negative TMR effect is used as an additional degree of freedom. This might be possible in other spintronic devices.
Band structure calculations give the theoretic explanation of the negative TMR.