Berlin 2008 – wissenschaftliches Programm
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DF: Fachverband Dielektrische Festkörper
DF 4: High-k dielectrics for highly scaled Silicon-based Micro- and Nanoelectronics
DF 4.2: Hauptvortrag
Montag, 25. Februar 2008, 14:40–15:05, EB 107
Molecular Beam Epitaxy of crystalline oxides on Si for C-MOS and for the monolithic integration of semiconductors on Silicon — •Saint-Girons Guillaume1, Merckling Clément1, El-Kazzi Mario1, Becerra Loic1, Regreny Philippe1, Patriarche Gilles2, Largeau Ludovic2, Favre-Nicolin Vincent3, and Hollinger Guy1 — 1INL/UMR5270-Site ECL, 36 av Guy de Collongue, 69134 Ecully cedex, France — 2LPN UPR20/CNRS Route de Nozay, 91460 Marcoussis cedex — 3cCEA/DRFMC/SP2M, 17 rue des Martyrs 38054 Grenoble and UJF, BP53, 38041 Grenoble cedex 9, France
In this contribution, a detailed description of the growth mechanisms and structural properties of high-k Al2O3, Gd2O3 and amorphous LaAlO3 on Si will be presented. On the basis of these studies, relevant oxide/Si systems will be proposed that fulfill the requirements of future C-MOS systems. In particular, very promising electrical characteristics have been obtained showing that the (amorphous LaAlO3)/Si system is compatible with ITRS recommendations in terms of EOT and leakage current. Moreover, it will also be shown that InP/oxide heterointerfaces present a quasi-ideal compliant behavior that opens the way to the monolithic integration of III-V heterostructures on Si for advanced micro and optoelectronic applications.