Berlin 2008 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 51: Poster IV
HL 51.58: Poster
Thursday, February 28, 2008, 16:30–19:00, Poster D
Investigation and analysis of ZnS substrates — •Oliver Graw1, Stefan Lautschläger1, Joachim Sann1, Niklas Volbers1, Swen Graubner1, Andreas Laufer1, Dietrich Schwabe1, Bruno K. Meyer1, Jürgen Bläsing2 und Alois Krost2 — 1I. Physics Institute, Justus-Liebig-University, Giessen, Germany — 2Institut for Experimental Physics, Otto-von-Guericke University, Magdeburg, Germany
ZnS with its direct bandgap of 3.6 eV at room temperature and its cubic crystal structure is an suitable candidate material for optoelectronic devices in the UV region. It has some advantages compared to its direct opponents ZnO and GaN for example its lack of crystal field or piezo electricity. We investigated commercially available ZnS single crystals, obtained from different suppliers, regarding to structural quality, photoluminescence, impurity content and electric properties. Comparisons with single crystals grown in our institute have been undertaken.