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DF: Fachverband Dielektrische Festkörper

DF 6: Poster I

DF 6.1: Poster

Dienstag, 24. März 2009, 09:30–12:30, P5

Atomic layer deposition and characterization of bismuth oxide thin films — •Philipp Moritz Leufke¹, Nicole Donia², Sanjay Mathur³, and Horst Hahn¹ — ¹Institute of Nanotechnology, Karlsruhe Research Centre, D-76344 Eggenstein-Leopoldshafen, Germany — ²Leibniz-Institute for New Materials, D-66123 Saarbruecken, Germany — ³University of Cologne, Institute of Inorganic Chemistry, D-50939 Cologne, Germany

We report on the deposition of thin films of bismuth oxide by atomic layer deposition (ALD). We used bismuth tert-butoxide [Bi(OtBu)₃] [1] as a bismuth precursor for the first time. H₂O serves as oxidizing precursor. Our aim was to overcome the problems caused by known precursors for bismuth containing oxides, which are often thermally unstable and require liquid-injection techniques or do not decompose entirely, leaving impurities in the resulting film [2].

Surface morphology and crystal structure of the prepared thin films are investigated by means of scanning electron microscopy and X-ray diffraction. Energy-dispersive X-ray spectroscopy and X-ray Photoelectron Spectroscopy are employed for chemical analysis. In our studies we show that the morphology dependends on various substrates and deposition parameters in these thin films.

[1] M. Mehring, Coordination Chemistry Reviews, 19th Main Group Chemistry 251, 974-1006 (2007)

[2] M. Vehkamäki et al., Journal of Materials Chemistry 14, 3191-3197 (2004)