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Dresden 2009 – wissenschaftliches Programm

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DF: Fachverband Dielektrische Festkörper

DF 6: Poster I

DF 6.1: Poster

Dienstag, 24. März 2009, 09:30–12:30, P5

Atomic layer deposition and characterization of bismuth oxide thin films — •Philipp Moritz Leufke1, Nicole Donia2, Sanjay Mathur3, and Horst Hahn11Institute of Nanotechnology, Karlsruhe Research Centre, D-76344 Eggenstein-Leopoldshafen, Germany — 2Leibniz-Institute for New Materials, D-66123 Saarbruecken, Germany — 3University of Cologne, Institute of Inorganic Chemistry, D-50939 Cologne, Germany

We report on the deposition of thin films of bismuth oxide by atomic layer deposition (ALD). We used bismuth tert-butoxide [Bi(OtBu)3] [1] as a bismuth precursor for the first time. H2O serves as oxidizing precursor. Our aim was to overcome the problems caused by known precursors for bismuth containing oxides, which are often thermally unstable and require liquid-injection techniques or do not decompose entirely, leaving impurities in the resulting film [2].

Surface morphology and crystal structure of the prepared thin films are investigated by means of scanning electron microscopy and X-ray diffraction. Energy-dispersive X-ray spectroscopy and X-ray Photoelectron Spectroscopy are employed for chemical analysis. In our studies we show that the morphology dependends on various substrates and deposition parameters in these thin films.

[1] M. Mehring, Coordination Chemistry Reviews, 19th Main Group Chemistry 251, 974-1006 (2007)

[2] M. Vehkamäki et al., Journal of Materials Chemistry 14, 3191-3197 (2004)

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