HL 11: Focused Session: Semi- and nonpolar group III nitrides I
Tuesday, March 24, 2009, 09:30–12:45, HSZ 01
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09:30 |
HL 11.1 |
Topical Talk:
Characterization and Control of Recombination Dynamics in Low-dimensional InGaN-based Semiconductors — •Yoichi Kawakami, Akio Kaneta, Masaya Ueda, and Mitsuru Funato
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10:00 |
HL 11.2 |
Topical Talk:
Optical polarization properties of nonpolar-oriented GaN films for polarization-sensitive and narrow-band photo-detectors — •Holger T. Grahn
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10:30 |
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15 min. break
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10:45 |
HL 11.3 |
Topical Talk:
Growth and characterisation of planar (11-20) and (11-22) GaN-based multiple quantum well structures — •Menno Kappers
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11:15 |
HL 11.4 |
Topical Talk:
Materials issues towards green laser diodes — •Andreas Hangleiter
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11:45 |
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15 min. break
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12:00 |
HL 11.5 |
Thermal trap emissions associated with stacking faults in undoped non c-plane GaN — •Kay-Michael Günther, Hartmut Witte, Matthias Wieneke, Jürgen Bläsing, Armin Dadgar, and Alois Krost
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12:15 |
HL 11.6 |
Facet formation and ohmic contacts for laser diodes on non- and semipolar GaN — •Jens Rass, Simon Ploch, Tim Wernicke, Luca Redaelli, Patrick Vogt, Sven Einfeldt, and Michael Kneissl
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12:30 |
HL 11.7 |
Growth of nonpolar a-plane GaN on r-plane Sapphire via HVPE — •Stephan Schwaiger, Thomas Wunderer, Frank Lipski, and Ferdinand Scholz
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