HL 11: Focused Session: Semi- and nonpolar group III nitrides I
Dienstag, 24. März 2009, 09:30–12:45, HSZ 01
 |
09:30 |
HL 11.1 |
Topical Talk:
Characterization and Control of Recombination Dynamics in Low-dimensional InGaN-based Semiconductors — •Yoichi Kawakami, Akio Kaneta, Masaya Ueda, and Mitsuru Funato
|
|
|
|
10:00 |
HL 11.2 |
Topical Talk:
Optical polarization properties of nonpolar-oriented GaN films for polarization-sensitive and narrow-band photo-detectors — •Holger T. Grahn
|
|
|
| |
10:30 |
|
15 min. break
|
|
|
|
10:45 |
HL 11.3 |
Topical Talk:
Growth and characterisation of planar (11-20) and (11-22) GaN-based multiple quantum well structures — •Menno Kappers
|
|
|
|
11:15 |
HL 11.4 |
Topical Talk:
Materials issues towards green laser diodes — •Andreas Hangleiter
|
|
|
| |
11:45 |
|
15 min. break
|
|
|
|
12:00 |
HL 11.5 |
Thermal trap emissions associated with stacking faults in undoped non c-plane GaN — •Kay-Michael Günther, Hartmut Witte, Matthias Wieneke, Jürgen Bläsing, Armin Dadgar, and Alois Krost
|
|
|
|
12:15 |
HL 11.6 |
Facet formation and ohmic contacts for laser diodes on non- and semipolar GaN — •Jens Rass, Simon Ploch, Tim Wernicke, Luca Redaelli, Patrick Vogt, Sven Einfeldt, and Michael Kneissl
|
|
|
|
12:30 |
HL 11.7 |
Growth of nonpolar a-plane GaN on r-plane Sapphire via HVPE — •Stephan Schwaiger, Thomas Wunderer, Frank Lipski, and Ferdinand Scholz
|
|
|