Dresden 2009 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 21: Devices

HL 21.5: Vortrag

Dienstag, 24. März 2009, 15:15–15:30, BEY 81

Low operation voltage light emitting device based on ZnO nanoparticles — •Ekaterina Neshataeva¹, Tilmar Kümmell¹, André Ebbers², and Gerd Bacher¹ — ¹Werkstoffe der Elektrotechnik and CeNIDE, Universität Duisburg-Essen, 47057 Duisburg — ²Evonik Degussa GmbH, Creavis, 45764 Marl, Germany

Semiconductor nanoparticles are very attractive candidates for future large-area light emitting devices that are both cost-effective and robust. In this contribution we demonstrate a ZnO nanoparticle light emitting device, which operates at low voltages without the need of any organic support layers. Tight nanoparticle layers were fabricated by a spin coating process using commercially available ZnO nanoparticles from the gas phase and fluorine-doped tin oxide glass as a substrate. After evaporation of a top electrode, a diode-like I-V characteristic was obtained. The device operation at room temperature starts at 4V and shows electroluminescence in the visible spectral range and a pronounced UV peak related to near-band gap emission of the ZnO. Thus, our findings open a path towards all-inorganic large-area particle based luminescent devices.