Dresden 2009 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 35: Semiconductor Laser
HL 35.3: Talk
Wednesday, March 25, 2009, 14:30–14:45, BEY 154
Lasing of the direct bandgap material Ga(NAsP) pseudomophically grown on Si(001)-substrate — •Sven Liebich1, Bernardette Kunert2, Igor Németh1, Steffen Zinnkann1, Andreas Beyer1, Rafael Fritz1, Christoph Lange1, Niko S. Köster1, Daniel J. Franzbach1, Sangam Chatterjee1, Wolfgang W. Rühle1, Nils C. Gerhardt3, Nektarious Koukourakis3, Martin Hofmann3, Kerstin Volz1, and Wolfgang Stolz1 — 1Material Sciences Center and Faculty of Physics, Philipps-University Marburg — 2NAsPIII/V GmbH Marburg — 3Photonics and Terahertz Technology, Ruhr-University Bochum
Photonic devices based on standard techniques used in complementary metal-oxide-semiconductor (CMOS) technology are of high interest to realize photonic integrated circuits. Silicon (Si) is the standard material but it is unsuitable for laser applications due to its indirect electronic bandgap. Therefore different strategies are pursued to realize an efficient Si-based light source i.e. the doping of crystalline Si with Erbium atoms or the use of Si nanocrystals. Our approach is the monolithic integration of the novel Ga(NAsP) laser material which can be grown nearly lattice-matched on Si. Through incorporation of Arsenic (As) and Nitrogen (N) the electronic structure can be designed in such a way that on one side the bandgap becomes direct. On the other side the lattice constant can be tuned to that of Si. Multi-quantum well structures containing the new material Ga(NAsP) were realized and results from optical pumping experiments revealed clear lasing action at low temperatures.