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HL: Fachverband Halbleiterphysik

HL 35: Semiconductor Laser

HL 35.3: Vortrag

Mittwoch, 25. März 2009, 14:30–14:45, BEY 154

Lasing of the direct bandgap material Ga(NAsP) pseudomophically grown on Si(001)-substrate — •Sven Liebich¹, Bernardette Kunert², Igor Németh¹, Steffen Zinnkann¹, Andreas Beyer¹, Rafael Fritz¹, Christoph Lange¹, Niko S. Köster¹, Daniel J. Franzbach¹, Sangam Chatterjee¹, Wolfgang W. Rühle¹, Nils C. Gerhardt³, Nektarious Koukourakis³, Martin Hofmann³, Kerstin Volz¹, and Wolfgang Stolz¹ — ¹Material Sciences Center and Faculty of Physics, Philipps-University Marburg — ²NAsPIII/V GmbH Marburg — ³Photonics and Terahertz Technology, Ruhr-University Bochum

Photonic devices based on standard techniques used in complementary metal-oxide-semiconductor (CMOS) technology are of high interest to realize photonic integrated circuits. Silicon (Si) is the standard material but it is unsuitable for laser applications due to its indirect electronic bandgap. Therefore different strategies are pursued to realize an efficient Si-based light source i.e. the doping of crystalline Si with Erbium atoms or the use of Si nanocrystals. Our approach is the monolithic integration of the novel Ga(NAsP) laser material which can be grown nearly lattice-matched on Si. Through incorporation of Arsenic (As) and Nitrogen (N) the electronic structure can be designed in such a way that on one side the bandgap becomes direct. On the other side the lattice constant can be tuned to that of Si. Multi-quantum well structures containing the new material Ga(NAsP) were realized and results from optical pumping experiments revealed clear lasing action at low temperatures.