Dresden 2009 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 9: Poster 1
HL 9.36: Poster
Monday, March 23, 2009, 14:30–17:00, P2
Annealing studies of Hf implanted AlxGa1−xN — •Thomas Geruschke1, Katharina Lorenz2, and Reiner Vianden1 — 1Helmholtz - Institut für Strahlen- und Kernphysik, Universität Bonn, Germany — 2Instituto Tecnologico e Nuclear, SACAVEM, Portugal
The annealing behaviour of 0.5 µm AlxGa1−xN on sapphire substrate after implantation of 181Hf was studied using the perturbed angular correlation (PAC) technique. Different AlxGa1−xN samples from the commercial supplier TDI Inc. were implanted with the radioisotope 181Hf at the Bonn Isotope Separator. Subsequently the samples were annealed in a rapid thermal annealing apparatus at 1273 K in nitrogen atmosphere. The strength of the electrical field gradient at the probe site varies almost linear with the concentration x of aluminum in the ternary compound, whereas the uniformity of this hyperfine interaction has its minimum at x ≈ 0.5. To confirm the linear behaviour, additional measurements will be carried out. First results will be presented and discussed.