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HL: Fachverband Halbleiterphysik

HL 9: Poster 1

HL 9.36: Poster

Montag, 23. März 2009, 14:30–17:00, P2

Annealing studies of Hf implanted Al_xGa_1−xN — •Thomas Geruschke¹, Katharina Lorenz², and Reiner Vianden¹ — ¹Helmholtz - Institut für Strahlen- und Kernphysik, Universität Bonn, Germany — ²Instituto Tecnologico e Nuclear, SACAVEM, Portugal

The annealing behaviour of 0.5 µm Al_xGa_1−xN on sapphire substrate after implantation of ¹⁸¹Hf was studied using the perturbed angular correlation (PAC) technique. Different Al_xGa_1−xN samples from the commercial supplier TDI Inc. were implanted with the radioisotope ¹⁸¹Hf at the Bonn Isotope Separator. Subsequently the samples were annealed in a rapid thermal annealing apparatus at 1273 K in nitrogen atmosphere. The strength of the electrical field gradient at the probe site varies almost linear with the concentration x of aluminum in the ternary compound, whereas the uniformity of this hyperfine interaction has its minimum at x ≈ 0.5. To confirm the linear behaviour, additional measurements will be carried out. First results will be presented and discussed.