Dresden 2009 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 8: Focused Session: Epitaxial Graphene I
O 8.1: Topical Talk
Montag, 23. März 2009, 11:15–11:45, SCH 251
Atmospheric pressure graphitization of SiC: a route towards wafer-size graphene films — K.V. Emtsev1, A. Bostwick2, K. Horn3, J. Jobst1, G.L. Kellog4, L. Ley1, J.L. McChesney2, T. Ohta4, S.A. Reshanov1, J. Röhrl1, E. Rotenberg2, A.K. Schmid5, D. Waldmann1, H.B. Weber1, and •Th. Seyller1 — 1FAU Erlangen-Nürnberg — 2Advanced Light Source, USA — 3FHI Berlin — 4Sandia National Laboratories, UAS — 5National Center for Electron Microscopy, USA
Graphene, a single monolayer of sp2-bonded carbon, is a very unique 2-dimensional electron gas system with electronic properties fundamentally different to other 2DEG systems [1]. A manifold of applications has already been suggested, which requires a uniform, ordered growth of graphene on an insulating substrate. The growth of graphene on insulating silicon carbide (SiC) surfaces by high-temperature annealing in vacuum [2] was proposed for the development of graphene-based electronics [3]. However, vacuum decomposition of SiC yields graphene layers with small grains. We have investigated the growth of graphene on SiC(0001) in an argon atmosphere [4] which produces monolayer graphene films with significantly improved morphology and carrier mobility. The new growth process establishes a method for the synthesis of graphene films on a technologically viable basis. [1] A.H. Castro Neto, et al., arXiv:0709.1163v2. [2] A. Charrier, et al., J. Appl. Phys. 92 (2002) 2479. [3] C. Berger et al., J. Phys. Chem. B 108 (2004) 19912; C. Berger, et al., Science 312 (2006) 1191. [4] K.V. Emtsev, et al., arXiv:0808.1222v1.