Regensburg 2010 – scientific programme

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14:00	HL 10.1	Ballistic rectification in an asymmetric Si/SiGe cross junction with modulated electron density — •Daniel Salloch, Ulrich Wieser, Ulrich Kunze, and Thomas Hackbarth

14:15	HL 10.2	Dot-Field Effect Transistor: Using locally strained silicon for MOSFET applications — •Jürgen Moers, Julian Gerharz, Gregor Mussler, Cleber Biasotto, Vladimir Jovanovic, Lis Nanver, and Detlev Grützmacher

14:30	HL 10.3	Ammonium hydroxide (NH₄OH) as etch-stop chemical for highly boron-doped silicon δ-layers — •Oliver Hammer, Florian Palitschka, Helmut Lochner, Tina Kubot, Dorota Kulaga-Egger, Daniel Beckmeier, Carolin Axt, Josef Biba, Ronny Schindler, Marc Dressler, Torsten Sulima, and Walter Hansch

14:45	HL 10.4	Interface Defect Study by GIDL Current and Charge Pumping Measurements on MOSFET Devices — •Guntrade Roll, Stefan Jakschik, Andre Wachowiak, Matthias Goldbach, and Lothar Frey

15:00	HL 10.5	Application of a parameter extraction method for MOSFETs — •Josef Biba, Dorota Kułaga-Egger, Torsten Sulima, and Walter Hansch

15:15	HL 10.6	Electrical characterization of doped semiconductor nanostructures with Scanning Microwave Microscopy — •Matthias A. Fenner, Hassan Tanbakuchi, Stephan Streit, Christine Baumgart, Manfred Helm, and Heidemarie Schmidt

15:30	HL 10.7	VLS-grown Vertical Silicon Nanowire FETs — •Hesham Ghoneim, Mikael Bjoerk, Heinz Schmid, Kirsten Moselund, Siegfried Karg, Walter Riess, and Heike Riel